| 초록 |
Poly vinylidene fluoride-co-trifluoroethylene (PVDF-TrFE) has been well known as one of the representative ferroelectric polymer materials for organic non-volatile memory applications. Among various architectures, ferroelectric field effect transistors have been great attention due to non-destructive readout and large scale integration , however, high gate leakage is one of the main problems. To solve the problem, we introduced thermal crosslinking agent,2,4,4-trimethyl-1,6-hexanediamine, so called, THDA, which forms molecular bonding between carbon of PVDF-TrFE and nitrogen atoms. Applying THDA, we obtained chemically and electrically robust PVDF-TrFE thin films applicable for non-voltaile memory units, such as MIMs and FeFETs. Moreover, the chemically networked film allowed for facile stacking of a solution-processable organic semiconductor, TIPS-Pentacene, leading to reliable I-V hysteresis with source-drain ON/OFF current bistability of 103 at sweeping gate voltage of ±20V. |
