| 초록 |
Van der Waals heterostructures built from 2D materials provide an unprecedented opportunity in designing new material systems because the lack of dangling bonds on the surfaces enables the creation of high-quality heterointerfaces. In particular, the ability to build artificial heterostructures, combined with the recent advent of 2D semiconductors, allows the fabrication of unique heterostructures in an ultimate thickness limit. In this talk, we will present the characterization of the electronic and optoelectronic properties of atomically thin p-n junctions consisting of WSe2 and MoS2 monolayers. We observed gate-tunable diode-like current rectification and a photovoltaic response. Unlike conventional bulk p-n junctions, the tunneling-assisted interlayer recombination of the majority carriers is responsible for the tenability of the device characteristics. Furthermore, we will discuss the enhanced optoelectronic characteristics in graphene-sandwiched vdW p-n junctions. |
