| 초록 |
Transition metal dichalcogenides such as MoS2 have received great interest as they exhibit interesting electrical, optoelectronic, and chemical properties. Single layer MoS2 thin-film transistors (TFTs) showed significantly improved electrical properties, such as high mobility (~100 cm2/Vs) and on/off ratio (106~108), after a high-k oxide layer was deposited on the top of channel. However, not much interest has been given to the effect of high-k dielectric layers deposited on multilayer MoS2 TFTs. In this presentation, we report improved electrical properties of bottom-gate multilayer MoS2 TFTs by high-k dielectric passivation. After depositing high-k dielectric layers on bottom-gate MoS2 TFTs fabricated with mechanically exfoliated multilayer MoS2 flakes, we observe that field effect mobility increases by two-fold and current-voltage hysteresis almost disappears. We also investigate interface properties to correlate them with the improved device performance. These results suggest that dielectric passivation can be an effective method of improving device performance of multilayer MoS2 TFTs. |
