| 초록 |
The metallic oxide nanomaterials including ZnO, Ga2O3, TiO2, and SnO2 have been synthesized by a number of methods including laser ablation, arc discharge, thermal annealing procedure, catalytic growth processes, and vapor transport. We have been interested in preparing the nanomaterials of Ga2O3, which is a wide band gap semiconductor (Eg=4.9 eV) and used as insulating oxide layer for all gallium-based semiconductor. Ga2O3 is stable at high temperature and a transparent oxide, which has potential application in optoelectronic devices. The Ga2O3 nanoparticles and nanobelts were produced using GaN single crystals, which were grown by flux method inside SUSTM cell using a Na flux and exhibit plate-like morphologies with 4 ~ 5 mm in size. In these experiments, the conventional electric furnace was used. GaN single crystals were pulverized in form of powder for the growth of Ga2O3 nanomaterials. The structure, morphology and composition of the products were studied mainly by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), and high-resolution transmission electron microscopy(HRTEM). |
