| 학회 |
한국고분자학회 |
| 학술대회 |
2015년 봄 (04/08 ~ 04/10, 대전컨벤션센터) |
| 권호 |
40권 1호 |
| 발표분야 |
분자전자 부문위원회 II |
| 제목 |
Analysis on pentacene-gate dielectric affiniy on pentacene crystal morphology in OFETs |
| 초록 |
Organic field-effect transistors (OFETs) are fabricated by depositing a thin film of semiconductor on the functionalized surface of a SiO2 dielectric. The chemical and morphological structures of the interface between the semiconductor and the functionalized dielectric are critical for OFET performance. We have characterized the effect of the affinity between semiconductor and functionalized dielectric on the properties of the semiconductor–dielectric interface. The crystalline microstructure/nanostructure of the pentacene semiconductor layers, grown on a dielectric substrate that had been functionalized with either poly(4-vinyl pyridine) or polystyrene, and grown under a series of substrate temperatures and deposition rates, were characterized by XRD, photoemission spectroscopy, and AFM. |
| 저자 |
백용화1, 안태규1, 장진혁1, 홍지수1, 김세현2, 박찬언1
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| 소속 |
1포항공과대, 2영남대 |
| 키워드 |
Dielectric; Charge transport; Organic field-effect transistor
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| E-Mail |
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