| 초록 |
Al2O3 electron transfer layer coating methods are ALD, sol-gel, nano-particle, and so on. In this study, we confirmed the electrical characteristics of Perovskite solar cell with Al2O3 ETL formed by thermal evaporation. Structure of the device was FTO / Al2O3 / CH3NH3PbI3 / spiro-OMeTAD / Ag. Al was deposited to 10, 20, 30nm on the FTO using a thermal evaporator and sintered in a furnace at 500 ℃ for 30 minutes to form an Al2O3 thin film. SEM images were taken to confirm the thickness change of the ETL. XPS measurement was performed to confirm the energy binding of Al2O3, and the binding energy between the peak of Al2p and the O1s was confirmed. Crystal structure of the Al2O3 ETL was hexagonal system, measured by XRD. Electrical characteristic was measured by solar simulator. Open circuit voltage were same all devices as 0.9V, the Perovskite solar cell which oxidized 10 nm Al device showed the highest photoelectric conversion efficiency. |
