| 학회 |
한국공업화학회 |
| 학술대회 |
2006년 봄 (05/12 ~ 05/13, 전북대학교) |
| 권호 |
10권 1호 |
| 발표분야 |
고분자 |
| 제목 |
POSS-containing Chemically Amplified Photoresists |
| 초록 |
POSS-containing nanocomposite materials were synthesized and evaluated as new chemically amplified resists. Incorporation of POSS groups into the matrix polymer made it possible to improve the dry-etch resistance, and excellent lithographic performance was obtained. The well-defined 100 nm positive patterns were obtained using an EUV lithography tool. The dry-etch resistance of this resist for a CF4-based plasma was 10% higher than that of poly(p-hydroxystyrene). |
| 저자 |
최재학1, 정찬희1, 라현실1, 임윤묵1, 전준표1, 강필현1, 노영창1, 홍성권2
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| 소속 |
1한국원자력(연), 2충남대 |
| 키워드 |
Photoresists; Lithography; POSS
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| E-Mail |
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