| 학회 |
한국재료학회 |
| 학술대회 |
2010년 가을 (11/11 ~ 11/12, 무주리조트) |
| 권호 |
16권 2호 |
| 발표분야 |
C. Energy and the Environment Technology(에너지 및 환경재료) |
| 제목 |
Effect of potassium hydrogen phthalate (C8H5KO4) on the properties of electrodeposited Cu(In,Ga)Se2 thin films |
| 초록 |
Cu(In,Ga)Se2 (CIGS) precursor thin films have been prepared on Mo coated glass substrates by electrodeposition at room temperature with various concentration of potassium hydrogen phthalate (C8H5KO4) from 40 to 320 mM. The electrolytic bath used contains CuCl2, InCl3, Ga(NO3)3 • xH2O, H2SeO3, LiCl, and C8H5KO4. The pH of electrolytic bath solution was adjusted to 3.0 by adding diluted HCl. The as-deposited CIGS precursors were annealed in Ar atmosphere at 550 °C for 1 h. The effects of C8H5KO4 concentration on the structural, morphological, and compositional properties of CIGS thin films were investigated by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), and energy dispersive spectroscopy (EDS), respectively. These properties were found to be strongly dependent on the concentration of C8H5KO4. As concentration of C8H5KO4 solution increases, the intensity of (112) peak increases with single phase polycrystalline chalcopyrite structure. FE-SEM micrographs showed that the deposited thin films have smooth and uniform surface morphology with increasing concentrations of C8H5KO4. |
| 저자 |
Doo Sun Choi1, Jong Ha Moon2, Jin Hyeok Kim1, Seung-Yup Lee2, Kyung-Am Kim1
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| 소속 |
1Department of Material Science and Engineering, 2Chonnam National Univ. |
| 키워드 |
Electrodeposition; CuInGaSe2 (CIGS); thin film; potassium hydrogen phthalate (C8H5KO4)
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| E-Mail |
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