| 학회 | 한국공업화학회 |
| 학술대회 | 2017년 가을 (11/08 ~ 11/10, 부산 벡스코(BEXCO)) |
| 권호 | 21권 2호 |
| 발표분야 | 에너지저장변환_포스터 |
| 제목 | Atomic layer deposition Sb2S3 solar cells with Li doped hole transfer layer |
| 초록 | Inorganic semiconductors and quantum dots (QDs) have been of great interest because they can replace the conventional Ru/organic dyes owing to their unique properties such as strong absorptivity, large dielectric constant, multiple exciton generation, and good stability. Hence many metal chalcogenides including CdS(e), PbS(e), and Sb2S(e)3 have been used as new sensitizer and their device efficiencies have been stiffly increased up to over 7% at 1 sun condition. In this study, Li doped hole transfer layer (HTL) was applied to atomic layer deposition (ALD) Sb2S3 solar cells with ZnO/ALD-Sb2S3/Poly-3-hexylthiophene (P3HT)/Au. The ALD-Sb2S3 solar cells with Li doped HTL showed significantly improved power conversion efficiency compared to the the ALD-Sb2S3 solar cells with Li undoped HTL. This work was supported by the DGIST R&D Programs of the Ministry of Science, ICT & Future Planning of Korea (17-BD-05) |
| 저자 | 이상주, 성시준, 김대환 |
| 소속 | 대구경북과학기술원 |
| 키워드 | ALD; Sb2S3; HTL |
