| 학회 | 한국재료학회 |
| 학술대회 | 2010년 가을 (11/11 ~ 11/12, 무주리조트) |
| 권호 | 16권 2호 |
| 발표분야 | F. Display and optic Materials and processing(디스플레이 및 광 재료) |
| 제목 | Improvement in the performance of ZnO thin-film transistors with doped Hafnium |
| 초록 | Transparent TFTs (TTFTs) with amorphous oxide semiconductors (AOSs) can offer an important aspect for the next generation displays with high mobility. Several oxide semiconductors such as ZnO, SnO2, In2O3, IZO, ZIO, IGO, ZTO and IGZO etc. have been extensively researched. Especially, ZnO is a direct band gap semiconductor with a wide energy band gap of 3.37eV so that optical transparency in the visible spectrum, suitable for transparent electronics. And high mobility and low temperature processing. However, intrinsic ZnO thin-film transistors can change electrical properties by external environments such as bias stress, in addition, processing on high temperature is unstable. In this study, we fabricated staggered bottom-gate structure ZnO-TFTs and patterned channel layer used a shadow mask. Then we compare to the performance between intrinsic ZnO-TFTs and Hafnium doped ZnO-TFTs. The performance were measured using semiconductor analyzer. Finally, we obtained an enhancement of ZnO-TFTs performance by doped Hafnium. Futhermore, we will study that Hafnium doped ZnO-TFTs stability with various condition for solve the problem of intrinsic ZnO-TFTs. |
| 저자 | 신새영, 문연건, 김웅선, 김경택, 박종완 |
| 소속 | 한양대 |
| 키워드 | ZnO; Thin film transistors(TFTs); amorphous oxide semiconductors(AOSs) |
