| 학회 |
한국고분자학회 |
| 학술대회 |
2019년 봄 (04/10 ~ 04/12, 부산컨벤션센터(BEXCO)) |
| 권호 |
44권 1호 |
| 발표분야 |
분자전자 부문위원회 I |
| 제목 |
Intense-pulsed-UV-converted perhydropolysilazane gate dielectrics for organic field-effect transistors and logic gates |
| 초록 |
We fabricated a high-quality PHPS-derived SiO2 film by intense pulsed UV irradiation and applied it as a gate dielectric layer in OFETs and complementary inverters. The conversion process of PHPS to SiO2 was optimized by varying the number of intense pulses and applied voltage. The chemical structure and gate dielectric properties of the PHPS-derived SiO2 films were systematically investigated via FT-IR spectroscopy and leakage current measurements, respectively. The resulting PHPS-derived SiO2 gate dielectric layer showed a leakage current density of 9.7×10−12Acm−2 at 4.0MVcm−1. The fabrication of the PHPS-derived SiO2 gate dielectric layer by a simple solution process and intense pulsed UV irradiation at room temperature serves as a novel approach for the realization of large-area flexible electronics in the flexible device industry of the future. |
| 저자 |
백한솔1, 김민제2, 백정주1, 김도환3, 신교직1, 최경호1, 조정호4
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| 소속 |
1생산기술(연), 2성균관대, 3한양대, 4연세대 |
| 키워드 |
spin-on-glass; perhydropolysilazane; pulsed UV; gate dielectric; organic field-effect transistor
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| E-Mail |
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