| 학회 |
한국재료학회 |
| 학술대회 |
2016년 가을 (11/16 ~ 11/18, 경주 현대호텔) |
| 권호 |
22권 2호 |
| 발표분야 |
F. 광기능/디스플레이 재료 분과 |
| 제목 |
Li-assisted IZO Thin Film Transistors on solution-processed ZrO2 dielectric at low temperature |
| 초록 |
Oxide semiconductors that can be deposited using low temperature solution process are very attractive for flexible display applications because of their potential advantages such as low cost and large uniformity. However, solution processed oxide semiconductors have shown lower performance due to the poor quality of oxide thin films, compared to vacuum processed counterparts. We investigated lithium (Li) doping effect on indium zinc oxide (IZO) thin film transistor (TFTs) with different Li ratios to enhance the performance of a solution processed IZO. The XRD results showed the crystallization of IZO was enhanced by Li doping. Compared to IZO TFTs. Li doped IZO TFTs exhibited higher on-current and increased effective field mobility (μFE). It indicates that the doping helps to crystallization of IZO thin films at lower temperature and, accordingly enhance the device performance. |
| 저자 |
Soo-Yeun Han1, Manh-Cuong Nguyen2, Jae-Won Choi1, An Hoang-Thuy Nguyen2, Jung-Youn Kim1, Rino Choi2
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| 소속 |
1Department of Materials Science and Engineering, 2Inha Univ. |
| 키워드 |
indium-zinc oxide (IZO); oxide semiconductor; solution metal oxide; lithium; thin film transistor
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| E-Mail |
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