| 학회 | 한국재료학회 |
| 학술대회 | 2016년 가을 (11/16 ~ 11/18, 경주 현대호텔) |
| 권호 | 22권 2호 |
| 발표분야 | G. 나노/박막 재료 분과 |
| 제목 | The electrical relationship between the oxide heterointerface thin-film diode and Al, Ag or Au top electrodes. |
| 초록 | Amorphous oxide semiconductors have been significant technical advances and applied for the advanced electronics industry over the past decade. The research into the heterointerface between the amorphous oxide semiconductors and oxide insulator is in the beginning state so far. We have investigated the electrical properties of the oxide heterointerface and found that unconventionally vertical diode current occurs. When the electrons are injected from the cathode, they flow across conduction band of the amorphous oxide semiconductor and oxide insulator layer. However, it is difficult to explain the reason of this vertical current flow by previous studies on electronics and requires a fundamental explanation. Herein, what we figure out is, the property of unidirectional current flow via MISM layer can be affected by top electrode materials such as Al, Ag, and Au. The structure of the device is p++ Si bottom electrode / SiO2(200 nm) insulator / amorphous IGZO(10~120 nm), ZnO(10~120 nm), and IZO(30 nm) semiconductor / Al, Ag and Au top electrode. Top metal and oxide semiconductor layer form a Schottky barrier contact on the thin film transistor device. In addition, we found that characteristics of vertical diode current behavior such as threshold voltage, on-off current ratio, and current flow mechanism can be adjusted to the thickness and kind of the oxide semiconductor materials. Our results suggest that various combinations of the top electrode and oxide semiconductor materials can contribute to finding out the mechanism of vertical currents flow through the hetero-interface between the oxide semiconductor and oxide insulator. With this strategy, we demonstrate various combinations of top electrodes and oxide semiconductors which are feasible to broaden a wider range of choices for the particular purpose of the unidirectional current flow device. |
| 저자 | Park Jun-woo, Jinwon Lee, Youn Sang Kim |
| 소속 | Seoul National Univ. |
| 키워드 | Oxide thin-film diode; rectifier; oxide semiconductors; oxide insulator; Schottky contact; oxide heterointerface |
