| 초록 |
The photocurrent (PC) variation on photoconductive CuGaSe2 (CGS) layers had been investigated as a function of temperature. Three peaks A, B, and C of the PC spectra were associated with the band-to-band transitions. Thus, the parameters of the crystal-field splitting (Δcr) and spin-orbit splitting (Δso) were directly acquired through the PC measurement. The Δcr and Δso were 0.0903 and 0.2130 eV at 10 K, respectively. From the relations of peak position and temperature, the temperature dependence of the band-gap energy is well described by Eg(T)= Eg(0)- (8.63 x 10-4)T2/(336+ T). Also, the Eg(0) is estimated to be 1.7952, 1.8855, and 2.0985 eV at the valence-band states of Γ7(A), Γ6(B), and Γ7(C), respectively. However, the behavior of the PC was different from that generally observed in other semiconductors: the PC intensities decreased with decreasing temperature. From the relation of log Jph vs 1/T, where Jph is the PC density, two dominant levels were observed, one at high temperature and the other at low temperature. By comparing the results of the PC and photoluminescence, we confirmed that the activation energy of 82.7 meV at high temperatures is related to the dissociation energy of donor level due to Se vacancies. Consequently, we suggest that in photoconductive CGS layers, the trapping center due to native defects and impurities limits the PC signal with decreasing temperature. |
