| 초록 |
Polycrystalline were grown on ceramic substrate using a chemical bath deposition (CBD)method. They were annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study CdSe polycrystal structure. Using extrapolation method of X-ray diffraction pattterns for the CdSe samples annealed in N2 gas at 450℃ it was found hexagonal structure whose lattice parameters a0 and c0 were 4.302Å and 7.014 Å, respectively. Its grain size was about 0.3 μm. Hall effect on this sample was measured by Van der Pauw method and studied on carrier density and movility depending on temperature. From Hall data, the mobiltty was likely to be decreased by piezo electric scattering at temperature range of 33K and 200K, and by polar optical scattering at temperature range of 200K and 293K. We measured also spectral response, sensitivity(γ), maximum allowable power dissipation and response time on these samples. |
