화학공학소재연구정보센터
학회 한국고분자학회
학술대회 2007년 가을 (10/11 ~ 10/12, 일산킨텍스)
권호 32권 2호
발표분야 분자전자 소재 및 소자 기술(분자전자 부문위원회)
제목 Siloxane based hybrid gate dielectrics for low-voltage pentacene organic thin film transistors
초록 Organic thin film transistors (OTFTs) have attracted much attention because of the processability, low cost, and flexibility. However, OTFTs with polymer gate dielectrics have a high threshold voltage due to the low capacitance of polymer gate dielectrics. The sol-gel derived siloxane based organic-inorganic hybrid materials (hybrimers) have the low leakage current density and very smooth surface. In this study, we synthesized photo-patternable methacryl-grafted hybrimers (MD) and fabricated the thin MD gate dielectric layer under 100 nm for low-voltage OTFTs. MD thin films have good electrical properties, including high dielectric strength and low leakage current density down to the 40nm thickness. MD thin films have smooth and hydrophobic surface. OTFTs with 40nm thick MD gate dielectrics are operating within -5V and exhibit a mobility of 0.3 cm2/V s, a threshold voltage of -2.6V, and a small subthreshold swing of 0.43 V/decade.
저자 최천기, Zhao Dan, 배병수
소속 한국과학기술원 신소재공학과
키워드 Organic thin film transistor; gate dielectric; siloxane based hybrid materials
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