| 학회 |
한국재료학회 |
| 학술대회 |
2011년 가을 (10/27 ~ 10/29, 신라대학교) |
| 권호 |
17권 2호 |
| 발표분야 |
C. Energy and the Environment Technology(에너지 및 환경재료) |
| 제목 |
Earth abundant element kieserite Cu2ZnSn(Sx,Se1-x)4 absorber thin films for tunable band gap characteristics |
| 초록 |
Cu2ZnSn(Sx,Se1-x)4 (CZTSS) were synthesized by two step process of sputtering deposited precursor and selenization route. In the frist step, the Cu/SnS2/ZnS stacked precursor thin films were deposited on Mo coated soda line glass by sputtering method at room temperature. In second step, the precursor thin films were selenized using a tubular two zone furnace system in an atmosphere og the mixed N2 (95%) + H2S(5%) + Se vapor with different temperature from 250 C to 500 C for 1 hour. The effect of different Se vapor temperatures ranging from 250 C to 500 C on the structural, chemical, compositional and optical properties of CZTSS thin films were investigated. X-ray diffraction patterns and Raman spectroscopy studies showed that the precursor thin film was several peak that could be assigned to ZnS, Cu and SnS2. However, the selenized thin films were a single kieserite CZTSS phase without secondary phase. The 2 theta angle position for the (112) peaks of the selenized thin films decreased with increasing Se vapor temperature. Energy dispersive X-rat results showed that the presence of Se in selenized thin films increased with increasing Se vapor tempreature. UV-VIS spectroscopy results showed that absorptyion coefficient of all the selenized thin films were over 104 cm-1 and those of band gao energy decreased from 1.5 eV to 1 eV with increasing Se vapor temperatures.
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| 저자 |
Seung Wook Shin1, Jun Hee Han1, G.L. Agawane2, Jong-Ha Moon2, Jeong Yong Lee1, Jin Hyeok Kim2
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| 소속 |
1KAIST, 2Chonnam National Univ. |
| 키워드 |
Cu2ZnSn(S; Se)4 (CZTSS); thin films; Absorber materials; earth abundant element
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| E-Mail |
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