| 학회 |
한국고분자학회 |
| 학술대회 |
2019년 가을 (10/09 ~ 10/11, 제주컨벤션센터) |
| 권호 |
44권 2호 |
| 발표분야 |
분자전자 부문위원회 II |
| 제목 |
Carbon Nanotube FeRAM Cell Based on Omega-Shaped Ferroelectric Gate |
| 초록 |
This paper presents a memory cell with a 1T1T architecture. The nonvolatile memory cell consists of a control transistor and an omega-shaped ferroelectric memory transistor. In the memory cell, a single-walled carbon nanotube network was inkjet-printed to serve as the active channel layers of both the transistors, and PVDF-HFP was inkjet-printed on top of the single-walled carbon nanotube channel layer to form an omega-shaped ferroelectric gate of the memory transistor. The source electrode of the control transistor was electrically connected to the gate electrode of the memory transistor, whereas the drain electrode of the memory transistor was connected to the gate electrode of the control transistor. The resulting memory cell facilitated complete separation of the writing and reading processes, which consequently afforded nondestructive readout capability. This work provides a potential route for the realization of high-performance flexible and printable nonvolatile memory cells. |
| 저자 |
김성찬1, 최용석1, 임동언2, 김형섭1, 조정호2
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| 소속 |
1성균관대, 2연세대 |
| 키워드 |
carbon nanotube; ferroelectric memory; one-transistor-one-transistor (1T1T); nondestructive readout; flexible.
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| E-Mail |
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