| 초록 |
Recently, transparent amorphous oxides (TAOS) have attracted much attention due to lots of advantages such as low processing cost, uniformly large area deposition at room temperature. Among the TAOS, amorphous In-Ga-Zn-O (a-IGZO) thin film has been widely considered as a material of transparent thin film transistor (TFT) device. In this study, we have deposited a-IGZO thin film as function of Ar, Ar-H2, O2/Ar O2, O2/Ar-H2 O2 at room temperature and investigated electrical & optical properties of a-IGZO thin film by Hall measurement and UV-VIS spectrometer, respectively. We also carried out crystallinities and surface morphologies of thin films by high resolution X-ray diffractometer (HRXRD) and Atomic Force Microscopy (AFM). Moreover, we have fabricated TFT devices and examined the characteristic of TFT performance for samples with high mobility by I-V measurement. |
