| 초록 |
Solution-processed oxide semiconductors thin film transistors (OS TFTs) with continuous, large scale, and low cost processibility have potential for next-generation display technology. Especially, studies on various precursors for high quality OS thin films in a low-temperature process have been focused for an OS film on a flexible substrate. Among them, OS TFTs fabricated with a metal aqua complex have attracted much attention because they have low temperature processibility as well as high field-effect mobility. However, despite of remarkable results, important factors to optimize their performance with a fidelity have not been achieved. Here, we demonstrate the importance of humidity control to enhance the electrical performance of OS TFTs. Through humidity control during the spin-coting process and annealing process, we successfully demonstrate solution-processed InOx/SiO2 TFTs with a good fidelity of ~ 5% standard deviation, showing high average field-effect mobility. |
