| 학회 |
한국재료학회 |
| 학술대회 |
2017년 봄 (05/17 ~ 05/19, 목포 현대호텔) |
| 권호 |
23권 1호 |
| 발표분야 |
G. 나노/박막 재료 분과 |
| 제목 |
Gate-tunable graphene mesh on Si Schottky junction solar cells for photovoltaic performance optimization |
| 초록 |
The graphene on n-type silicon Schottky junction solar cells (SJSCs) are great interest due to their simple structure and cost-effectiveness. Subsequent to the initial Gr-Si SJSC with a power conversion efficiency (PCE) of 1.5%, the performance of the devices has been enhanced up to 8.6 % by use of chemically doped graphene, and further up to 12.4% by use of optimal interfacial oxide thickness. Such a rapid increasing of the PCE, yet it is still lower than the best record of the metal-Si SJSCs (~20%), illustrates that the carrier transport or charge recombination across the junction potential plays an importance role of the cell performance and there remains lots of room for improvement. Herein, we introduced a new type of graphene mesh on Si (GM-Si) SJSCs integrated with external electric field and investigated the power generation characteristics depending on the gate voltage (Vg). To realize the full benefit of the use of Vg, it is important to engineer the screening or penetration of electric-field. The advantages of the graphene mesh can be attributed to the existence of holes that increases the work function and permeability to electric-field. Consequently, the GM-Si SJSCs exhibited dramatic increase in the PCE from 7.9 % at Vg = 0 V to 11.2 % at Vg = -1 V. |
| 저자 |
Jae Hyung Lee, Won Woo Lee, Dong Won Yang, Jin Tae Kim, Won Il Park
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| 소속 |
Hanyang Univ. |
| 키워드 |
<P>Graphene; Graphene mesh; Silicon; electric-field; Schottky</P>
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| E-Mail |
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