| 초록 |
Controllable growth of metallic nanotubes has been a topic of continuing investigation, because of the need to obtain high performance high-density nanoelectronic devices such as field-effect transistors (FETs), chemical and biological sensors and piezoelectronics. Titanium nitrides (TiN) have high electrical conductivity and thermal conductivity, good chemical stability, high melting temperature (3220 oC), extreme hardness (20.6 GPa), high bending strength (260 MPa), catalytic activity, radiation resistance, as well as low-temperature superconductivity. In this study, aligned arrays of TiN nanotubes on substrates were successfully fabricated via a plasma-enhanced atomic layer deposition (PEALD) in nanoporous anodic aluminum oxide templates (AAO). The resistivity of TiN nanotube arrays was measured using a four-point probe technique. The structure and morphology of the TiN nanotube arrays were studied using X-ray diffraction, scanning electron microscopy. |
