| 학회 |
한국고분자학회 |
| 학술대회 |
2013년 봄 (04/11 ~ 04/12, 대전컨벤션센터) |
| 권호 |
38권 1호 |
| 발표분야 |
분자전자 부문위원회 |
| 제목 |
Efficient Work-Function Engineering of Solution-Processed MoS2 Thin-Films for Novel Hole and Electron Transport Layers Leading to High-Performance Polymer Solar Cells |
| 초록 |
We have successfully prepared a solution-processed, single-layered, and full-covered MoS2 thin-film via a simple spin-coating method and further demonstrated that the WFs of un-doped MoS2 films can be efficiently modulated by p- and n-doping processes. From the results, un-, p-, and n-doped MoS2 thin-films were all investigated for applications as anode and cathode interfacial layers for high-performance PSCs. Compared with un-doped MoS2-based HTL in n-PSCs, significantly enhanced performances were demonstrated by p-doping the MoS2 thin-film, and the photovoltaic performance was comparable to that of PEDOT:PSS-based cells. More interestingly, after n-doping treatment, the PCE of a cell with un-doped MoS2 ETL was dramatically enhanced from 0.25 to 2.73%, reflecting that carrier transport properties of the MoS2 film were efficiently altered from hole to electron. |
| 저자 |
윤진문1, 노용진2, 여준석1, 고영진3, 나석인3, 정형구1, 김주환1, 이세현1, 김석순4, 구혜영2, 김태욱2, 김동유1
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| 소속 |
1광주과학기술원, 2한국과학기술(연), 3전북대, 4군산대 |
| 키워드 |
polymer solar cells; interfacial layers; doping; molybdenum disulfide
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| E-Mail |
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