| 학회 |
한국재료학회 |
| 학술대회 |
2007년 가을 (11/02 ~ 11/02, 성균관대학교) |
| 권호 |
13권 2호 |
| 발표분야 |
반도체재료 |
| 제목 |
Temperature dependence of photoluminescence of InAs quantum dots with InxGa1-xAs overgrowth layer. |
| 초록 |
Self-assembled InAs/GaAs quantum dots (QDs) have been intensively investigated because of their potential for the optoelectronic devices such as QD’s diode lasers which have higher differential gain, lower threshold current density and higher thermal stability compared with other low-dimension quantum structures, due to the atomic-like density of state in QD system. We have investigated the temperature dependence of the PL spectra for the self-assembled InAs QDs with an asymmetric InGaAs QW. The excited-state transition for the InAs QDs with an asymmetric InGaAs QW with increasing temperature almost not appeared due to the large energy-level spacing between the ground states and the first excited states. The PL peak position of the samples with an asymmetric InGaAs QW was definitely more red-shifted with increasing temperature, compared to the reference sample. Temperature-dependent PL shows that the FWHMs of the samples with In modulation InxGa1-xAs overgrowth layer were keeping nearly constant in the temperature range of 20−200 K. The thermal activation energy of the electron-hole emission for the InAs QDs with an asymmetric InGaAs QW was considerably decreased, compared to the InAs QDs without that. The InAs QDs with graded InxGa1-xAs overgrowth layer will be promising for the device applications such as 1.3 μm QD-based lasers and 1.3 μm optical-fiber communication. |
| 저자 |
박호진1, 김종호2, 김도엽1, 김민수2, 김군식1, 김진수2, 김종수1, 손정식2, 류혁현1, 전민현2, 조관식3, 임재영4
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| 소속 |
1인제대, 2나노매뉴팩쳐링 (연), 3전북대, 4고등광기술(연) |
| 키워드 |
Photoluminescence; InAs; Quantum dots
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| E-Mail |
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