| 학회 |
한국고분자학회 |
| 학술대회 |
2009년 봄 (04/09 ~ 04/10, 대전컨벤션센터) |
| 권호 |
34권 1호 |
| 발표분야 |
기능성 고분자 |
| 제목 |
Hysteresis-free organic thin film transistor using P4OPMSas a gate insulator |
| 초록 |
The high performance of OTFTs has been realized with improved organic gate insulators. As well known, the gate insulators contain hydroxyl groups are affected with impurities such as moisture, oxygen well and these effects cause hysteresis. In this study, hydroxyl group-free poly-4-oxophenylmethylstyrene (P4OPMS) was synthesized and used as a gate insulator in OTFTs. P4OPMS molecular structure is resemble to PVP. But P4OPMS is hydroxyl free groups because it is substituted by phenyl group for hydrogen of hydroxyl group. Surface of P4OPMS gate insulator is hydrophobic which is possible at low temperature. Moreover, the pentacene TFTs with P4OPMS gate insulator is hysteresis free and gave high performance than PVP gate insulator. P4OPMS device exhibited mobilities of 0.15cm2V-1s-1 with on/off ratio 105. |
| 저자 |
최연길1, 김효중1, 심교승1, 문혜린2, 조성우3, 표승문1
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| 소속 |
1건국대, 2경기북과학고, 3대구나노(연) |
| 키워드 |
OTFT; hyteresis
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| E-Mail |
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