| 초록 |
Perovskite solar cells (PSCs) have rapidly emerged as a competitive solar cell technology in the past few years due to high efficiency, low-cost and flexible properties. Although efficiencies of PSCs have dramatically improved, PSCs need ways for improvement in stability and device efficiency. In this work, we employed a Zn-doped NiOx film as the hole-transporting layer in PSCs. NiOx is a promising hole-transporting material for PSCs due to its high hole mobility, good stability, and easy processability. Zn has a similar atomic size with Ni and divalent ions of Zn have a good doping effect. This introduction of this material is expected to attract much attention. |
