| 초록 |
Electrical and optical properties of Al-doped ZnO film prepared by RF-magnetron sputtering deposition were investigated with various heating conditions. The resistivity changes on heating conditions were observed, and variations of resistivity were determined by conditions of temperature and time. The reason of resistivity change was caused by oxidation of film in air, and was confirmed by binding energy shift in XPS analysis. Results showed that values of carrier concentration ranged between 1.12×1019cm-3 and 3.33×1020cm-3, and values of Hall mobility ranged between 4.98cm2/V•s and 22cm2/V•s with various heating conditions. |
