| 학회 | 한국재료학회 |
| 학술대회 | 2012년 봄 (05/17 ~ 05/18, 무주덕유산리조트) |
| 권호 | 18권 1호 |
| 발표분야 | A. 전자/반도체 재료(Electronic and Semiconductor Materials) |
| 제목 | Analysis of stepped Al2O3 control oxide NFGM for improve multi-level characteristics |
| 초록 | The non-volatile memory with nano floating gate containing nano particles(NCs) is very attractive for promising characteristics in small size, low operating power, fast write/erase speed and enough on-off voltage gap. When Electric field let charges tunnel through tunneling oxide, charges are trapped in NCs. Those charges make memory window dividing ‘0’ and ‘1’. Differentiating the thickness of control oxide(Al2O3), programming can be occurred twice at one dot implying multi-level programming characteristic. Partially etching the control oxide, differentiated control oxide thickness can be acquired. Nano particles under the thinner control oxide can be partially charged when applied voltage is not high enough for the charges under the thicker control oxide. With appropriately designed structure, it is possible to let second programming starts after the saturation of first one at higher voltage. Au NCs have high work function(4.7eV) and low chemical reactivity. And both of metals tend to be ball up due to its high surface energy when ultrathin Au films deposited on tunneling oxide(SiO2). In this work, with a control oxide of different thicknesses NFGM device electrical characteristics were analysis. Au NCs are controlled by 1nm thickness of wetting layer at the same annealing condition(RTA, 650°C, 1min) and the memory window was analyzed. |
| 저자 | Young Woong Moon1, Duck Kyun Choi2 |
| 소속 | 1Department of Materials Science and Engineering, 2Hanyang Univ. |
| 키워드 | NFGM; Multi-level; Nano particle; control oxide; etching |
