| 학회 |
한국재료학회 |
| 학술대회 |
2014년 봄 (05/15 ~ 05/16, 창원컨벤션센터) |
| 권호 |
20권 1호 |
| 발표분야 |
C. 에너지/환경 재료(Energy and Environmental Materials) |
| 제목 |
Fabrication and characterization of Bi2Te3 thermoelectric films by using plasma-enhanced chemical vapor deposition technique |
| 초록 |
Thermoelectric n-type bismuth telluride (Bi2Te3) films were fabricated on Si (001) substrate by using plasma-enhanced metallorganic chemical vapor deposition (PECVD) within the temperature range of 100-300 oC with fixed RF power. Ttriisopropyl bismuth and diisopropyl tellurium were used as Bi and Te precursors, respectively. Hydrogen was used as reactant gas. The effects of deposition temperature on surface morphology, crystallinity and electrical transport properties were investigated. The structural and compositional properties of Bi2Te3 films were characterized using X-ray diffractometry (XRD), field emission scanning electron microscopy (FESEM), X-ray fluorescence analyzer (XRF) and X-ray photoelectron spectroscopy (XPS). The carrier concentration, carrier mobility and electrical resistivity were determined by Hall measurement at room temperature. |
| 저자 |
Chang Wan Lee1, Seong Gu Kang1, Yoon Jang Chung1, Hyung Jun Kim2, Young Kuk Lee1
|
| 소속 |
1Korea Research Institute of Chemical Technology (KRICT), 2Yonsei Univ. |
| 키워드 |
Termoelectricity; Bismuth telluride; PECVD; MOCVD
|
| E-Mail |
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