| 학회 |
한국재료학회 |
| 학술대회 |
2016년 봄 (05/18 ~ 05/20, 여수 디오션리조트 ) |
| 권호 |
22권 1호 |
| 발표분야 |
G. 나노/박막 재료 분과 |
| 제목 |
Improve Quality of Bi2Te3 Films Grown by Molecular Beam Epitaxy on (0001) Sapphire Substrate |
| 초록 |
Recently, bismuth telluride has attracted intense interest because of its application potential for thermoelectric devices and its topological insulator properties. Bulk Bi2Te3 could be grown from many methods; however epitaxial layers are highly desired for practical device applications. Among thin films deposition techniques, the Molecular Beam Epitaxy (MBE) technique has many advantages including convenient physical deposition (without conceiving the complexity of chemistry), accurate film thickness, excellent potential in doping control, and possible integration of heterostructures and/or superlattices. We report a comprehensive study about growth behaviors of Bi2Te3 epitaxy films by MBE on (0001) sapphire substrate. By applying in-situ annealing to an initial thin epi-layer of Bi2Te3, both the smoothness and crystal quality of the films were improved. Several growth conditions for the first initial layer growth step followed by annealing were applied. The growth of second layer epitaxy films took the advantage of the smooth morphology and good crystallinity of the optimized first layers. The growth and annealing processes were in-situ monitored by reflection high energy diffraction (RHEED). The morphology and crystal structural of the films were characterized by atomic force microscopy (AFM), scanning electron microscopy (SEM) and high-resolution x-ray diffraction (XRD) method. |
| 저자 |
Duc Duy Le1, Trong Si Ngo2, Soon-Ku Hong1, Duy Khanh Tran2
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| 소속 |
1Department of Advanced Materials Engineering, 2Chungnam National Univ. |
| 키워드 |
Epitaxy; Bismuth telluride; Annealing; Molecular Beam Epitaxy
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| E-Mail |
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