| 학회 | 한국재료학회 |
| 학술대회 | 2017년 가을 (11/15 ~ 11/17, 경주 현대호텔) |
| 권호 | 23권 2호 |
| 발표분야 | C. 에너지 재료 분과 |
| 제목 | Thermoelectric Characteristics of Si/Silicide-Heterostructure Layers Fabricated by RF Magnetron Sputtering |
| 초록 | Recently, due to the limitation of fuel energy, much attention has been paid to novel energy harvesting systems. Particularly, thermoelectric-based energy harvesting systems have been of great concern due to their high potential for the applications of the internet of things (IoT), healthcare monitoring and wearable systems, leading to a variety of intensive research & development efforts. However, many studies have been limited to toxic materials such as Bismuth Telluride and Lead Telluride. There is also a limitation in depositing the thermoelectric materials made of Bismuth Telluride or Lead Telluride in the form of thin films ranging in thickness from several micro to nano meters. In this paper, we present a study on environment-friendly, non-toxic thermoelectric Si/silicide heterostructure layers. Silicon (Si) material itself has two key parameters, intrinsically low Seebeck coefficient and high thermal conductivity, which means that its figure of merit (ZT) is small. To overcome this drawback, in this work, we apply the so-called “bandgap engineering” concept to the formation of the Si/silicide heterostructure layer, where the ZT value can be further increased conceptually by increasing the Seebeck coefficient by both filtering out low energy electrons and also decreasing the thermal conductivity by suppressing the phonon-phonon scattering. To fabricate Si/Silicide heterostructure layers, we used an RF magnetron sputtering method and a rapid thermal annealing (RTA) process. The fabricated heterostructure layers were analyzed by using scanning electron microscopy (SEM), X-ray diffraction (XRD), and Seebeck coefficient analyzer, etc. Acknowledgment: This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (Grant No. 2016R1D1A1B01007074). |
| 저자 | Ji Hwa Lee, Jae Kwon Ha, Chongsei Yoon, Giwan Yoon |
| 소속 | Korea Advanced Institute of Science and Technology |
| 키워드 | <P>Thermoelectric; heterostructure; silicide; RF magnetron sputtering</P> |
