| 학회 | 한국재료학회 |
| 학술대회 | 2016년 가을 (11/16 ~ 11/18, 경주 현대호텔) |
| 권호 | 22권 2호 |
| 발표분야 | G. 나노/박막 재료 분과 |
| 제목 | Atomic layer deposition of Zn1-xSnxOy thin films for buffer layer application in photovoltaic cells. |
| 초록 | Zinc tin oxide (ZTO) is a ternary oxide composed of environmental safe and earthly abundant elements which has been studied and explored for various applications including photovoltaics (PV) and gas sensing. As buffer layers in CIGS solar cells, thin film ZTO have demonstrated PV efficiencies comparable or better than the toxic CdS buffer layers due to their large bandgap which can be further tuned by varying the cation atomic ratio. They were also used as electron blocking layer in the record best Cu2O solar cells. In this study, we deposited Zn1-xSnxOy using DEZ and Sn(dmamp)2 as the zinc and tin sources, respectively, and 50 wt.% H2O2 as a common reactant in an ALD process. Prior to depositing the ternary oxide, binary ZnO and SnO2 were deposited within a temperature range of 100-200 oC and characterized appropriately. ZTO films were deposited at 120 oC with various sub-cycle ratios of ZnO and SnO2. It was observed that the growth rate of the ternary oxide rapidly decreased as SnO2 sub-cycle increased. The growth characteristics and film properties including refractive index (film density), bandgap and electrical properties depending on the sub-cycle ratio of binary oxides will be presented in detail. |
| 저자 | Raphael Edem Agbenyeke1, Hyo Yeon Kim2, Bo Keun Park2, Chang Gyoun Kim2, Taek-Mo Chung2, Jeong Hwan Han2 |
| 소속 | 1Univ. of Science and Technology, 2Korea Research Institute of Chemical Technology |
| 키워드 | ALD; ZnSnO; Buffer layer; Sn(dmamp)2; DEZ |
