| 초록 |
The recent progress of solution based CIGS thin film photovoltaic technologies at KIST is introduced. Particularly, band-gap grading associated with composition gradient throughout the CIGS film thickness is achieved by selenization process under surfur gas environment. In addition, interface engineering to gain high solar cell efficiency is performed by applying ternary material as a buffer layer. Our highest solar cell efficiency of the solution processed CIGS thin film solar cell that has been achieved is 14.4%, which is comparable record to world best one by using highly toxic and explosive hydrazine based method. The details of the synthetic method and characterizations of the solution based CIGS thin film solar cells will be discussed in the presentation. |
