| 학회 | 한국화학공학회 |
| 학술대회 | 2007년 봄 (04/19 ~ 04/20, 울산 롯데호텔) |
| 권호 | 13권 1호, p.924 |
| 발표분야 | 재료 |
| 제목 | Electrodeposition of CoWP thin films on copper line on p-type silicon wafer |
| 초록 | The use of Cu for wiring in ULSI for chips and MEMS has some advantages over Al wiring, but a major drawback of Cu wiring is its oxidation and diffusion into SiO2 layers. To prevent Cu from oxidation and diffusion, barrier layers with dielectric/metallic materials have been proposed. Among them, electrolessly deposited CoWP has been reported to have better barrier property. However, there is no report in the literature on electrodeposition of CoWP layers although it has some advantages over electroless deposition. Therefore, the present study focuses on electrodeposition of CoWP thin films. At first the electrochemical studies on the deposition of CoWP have been performed using CV and LSV. The nucleation and growth mechanisms of CoWP on Cu have been investigated. Based on the electrochemical characterization, a bath for the deposition of CoWP films has been developed. The effects of various electrochemical process parameters on film properties have been studied. The characterization of the films has been carried out using XPS, EDX, XDR and SEM. It has been found that all of the process parameters have significant influences on the composition and other physical properties of the deposited thin films. |
| 저자 | S. M. S. I. Dulal, 윤형진, 신치범, 김창구 |
| 소속 | 아주대 에너지시스템학부 화학공학과 |
| 키워드 | electrodeposition; CoWP; capping layer; barrier layer |
| VOD | VOD 보기 |
| 원문파일 | 초록 보기 |
