| 학회 | 한국공업화학회 |
| 학술대회 | 2017년 가을 (11/08 ~ 11/10, 부산 벡스코(BEXCO)) |
| 권호 | 21권 2호 |
| 발표분야 | 에너지저장변환_포스터 |
| 제목 | Effects of S/(Se+S) ratio on Cu2ZnSn(S,Se)4 by sputtering ZnS compound films |
| 초록 | Cu2ZnSn(S,Se)4 (CZTSSe) thin film solar cells were obtained by covering metal-sulfur compound films on metal precursors, followed by selenization. For CZTSSe semiconductor, the optimization of band gap has a positive influence on the improvement of low open-circuit voltage (Voc). The band gap can be tuned by adjusting the S/Se ratio. In this work, CZTSSe films were prepared on Mo coated soda-lime glass substrates by annealing stacked precursors in selenium atmosphere. The precursors were prepared by RF/DC sputtering method, composed of Zn, Sn, Cu metallic layers and ZnS compound layer with ZnS/Cu/Sn/Zn/Mo stacking order. We fabricated CZTSSe thin film solar cells, targeting appropriate Cu-poor and Zn-rich composition. This study showed that the ssulfur content and the band gap in CZTSSe films varied depending on ZnS film thickness. Acknowledgment This work was supported by the DGIST R&D Programs of the Ministry of Science, ICT & Future Planning of Korea (17-BD-05). |
| 저자 | 김영일, 손대호, 심준형, 양기정, 김대환, 강진규 |
| 소속 | DGIST |
| 키워드 | CZTS; ZnS; sputtering; solar cell |
