| 초록 |
Organic semiconductors based transistors require high voltage for operation. Therefore, electrolyte dielectric materials are used. However, these dielectric materials induce undesirable doping effects and power dissipation problems. In this research, we report a method for fabricating low-power organic electronic devices using a source-gated transistor (SGT) structure. In SGTs, asymmetric metals with different work functions are used for the source and drain electrodes. Organic SGTs exhibit lower drain voltage (＜10 V) for the saturation regime compared to typical field-effect transistors based on the same materials (＞80 V). In addition, using n-type dopant, the threshold voltage of n-type SGTs is shifted from 51.2 to 0.1 eV and air-stability is improved. Finally, we fabricate flexible SGTs on a Parylene-C substrate which demonstrate stable operation under a bending condition. Our results show a promising technology for low-power, flexible electronic devices. |
