| 학회 |
한국재료학회 |
| 학술대회 |
2017년 봄 (05/17 ~ 05/19, 목포 현대호텔) |
| 권호 |
23권 1호 |
| 발표분야 |
G. 나노/박막 재료 분과 |
| 제목 |
Characterization of Sn-doped β-Ga2O3 films grown on c-plane sapphire by Plasma Assisted Molecular Beam Epitaxy |
| 초록 |
Recently, β-Ga2O3 has attracted much attention due to its interesting properties such as wide band gap Eg = 4.9 eV, high transparency from visible to ultraviolet region and high break-down field. It is a promising material for potential applications in high power devices, transparent electronic devices and deep ultraviolet photodetectors. Tuning conductivity, band gap of β-Ga2O3 film are necessary to suit with application target. The doping method is known to be an effective way to tune the film properties such as crystallinity, conductivity, and optical band gap. In this work, we report the growth and characterization of Sn-doped β-Ga2O3 films on c-plane sapphire substrates by Plasma Assisted Molecular Beam Epitaxy (PAMBE). Effect of Sn doing on properties of β-Ga2O3 films were investigated. The growth processes were monitored by in-situ reflection high energy electron diffraction (RHEED) observation. The surface morphology of films were investigated by atomic force microscope (AFM). The scanning electronic microscope (SEM) was used to determine the thickness of films. The structure of films were characterized by X-ray diffraction (XRD). The optical transmittance measurements were performed to investigate the effect of Sn flux on transmittance and optical band gap of the films. |
| 저자 |
Trong Si Ngo1, Duc Duy Le2, JeongKuk Lee1, Soon-ku Hong2
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| 소속 |
1Department of Advanced Materials Engineering, 2Chungnam National Univ. |
| 키워드 |
Plasma Assisted Molecular Beam Epitaxy (PAMBE); Sn-doped β-Ga<SUB>2</SUB>O<SUB>3</SUB>; c-plane sapphire.
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| E-Mail |
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