| 학회 |
한국재료학회 |
| 학술대회 |
2009년 봄 (05/21 ~ 05/22, 무주리조트) |
| 권호 |
15권 1호 |
| 발표분야 |
전자재료 |
| 제목 |
Effect of ZnO buffer layer on the properties of 4wt% Ga doped ZnO thin films on Al2O3 (0001) substrate at low growth temperature 250 °C |
| 초록 |
The high-quality epitaxial Ga-doped ZnO (GZO) thin films with high Ga doping concentration (4 wt%) were prepared on Al2O3 (0001) substrates by using RF magnetron sputtering method at low growth temperature (250 ℃) using ZnO buffer layer. The effect of ZnO buffer layer on the structural, surface morphological, optical and electrical properties of the deposited films was investigated. X-ray diffraction and transmission electron microscope study showed that ZnO buffer and GZO thin films with buffer layer were epitaxially grown with an orientation relationship of . However, GZO thin films without ZnO buffer layer were grown as a polycrystalline hexagonal wurtzite phase with a c-axis preferred, out-of-plane orientation and random in-plan orientation. The structural images from scanning electron microscopy and atomic force microscopy showed that GZO thin films with ZnO buffer layer had a rougher surface morphology than that of without ZnO buffer layer. The optical transmittance and electrical resistivity of GZO thin film with ZnO buffer later became improved compared to that without ZnO buffer layer form 65 % to 75 % and from to 4.69×10-3 Ωcm to 1.01×10-3 Ωcm, respectively. |
| 저자 |
Seung Wook Shin1, Kyu Ung Sim2, Doo Sun Choi1, Jong-Ha Moon2, Jin Hyeok Kim1
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| 소속 |
1Department of Materials Science and Engineering, 2Chonnam National Univ. |
| 키워드 |
Transparent conducting oxide (TCO); RF magnetron sputtering; Ga-doped ZnO thin films (GZO); buffer layer; epitaxial growth.
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| E-Mail |
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