| 학회 |
한국재료학회 |
| 학술대회 |
2010년 봄 (05/13 ~ 05/14, 삼척 팰리스 호텔) |
| 권호 |
16권 1호 |
| 발표분야 |
B. Nanomaterials Technology (나노소재기술) |
| 제목 |
A Study on Electrical Extraction of One Dimensional MOSFET Transistor Doping Profiles by Threshold Voltage Measurement |
| 초록 |
The doping profiles of lightly doped semiconductors are most commonly determined from capacitance-voltage measurements for junction devices. Such C-V measurements work well for large-area devices and lightly doped device(LDD), but they are not very suitable for high doping concentrations found in heavily doped devices. And the channel region under the MOSFET gate has an additional limitation. The small gate area has very small capacitances that are diffcult to measure, making C-V based techiques diffcult or impossible. In view of these experimental diffculties, so we tried electrical doping profiling measurement for MOSFET with short gate length and ultra thin oxide thickness and checked good agreement with ISE simulation results. And it is expected that an electrical doping profiling can be used for analyzing of plasma induced damage or hot carrier injection failures. |
| 저자 |
권석일1, 박현호2, 정한욱1, 고지수1, 최병덕1
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| 소속 |
1성균관대, 2삼성전자 |
| 키워드 |
LDD; C-V; ISE; short gate length; ultra thin oxide thickness
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| E-Mail |
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