| 학회 |
한국공업화학회 |
| 학술대회 |
2016년 봄 (05/02 ~ 05/04, 여수 엑스포 컨벤션) |
| 권호 |
20권 1호 |
| 발표분야 |
(나노)나노 반도체 소재 및 소자 |
| 제목 |
Electrical wind force-driven and dislocation-templated amorphization in phase-change nanowires |
| 초록 |
Phase-change materials undergo rapid and reversible crystalline-to-amorphous structural transformation and are being used for nonvolatile memory devices. We have studied the effect of electrical pulses on the crystalline-to-amorphous phase change in a single-crystalline Ge2Sb2Te5 (GST) nanowire memory device via in situ transmission electron microscopy (TEM). We show that electrical pulses produce dislocations in crystalline GST, which become mobile and glide in the direction of hole-carrier motion. The continuous increase in the density of dislocations moving unidirectionally in the material leads to dislocation jamming, which eventually induces the crystalline-to-amorphous phase change with a sharp interface spanning the entire nanowire cross section. Our understanding about dislocation-templated amorphization suggests that the transition from crystalline to amorphous states in phase-change materials may not require a melting process. |
| 저자 |
남성욱 |
| 소속 |
기초과학(연) |
| 키워드 |
memory device; in-situ TEM
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| E-Mail |
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