| 초록 |
CdSe quantum dots (QDs) as the current workhorse has been extensively investigated. CdSe QDs exhibit photostability, high quantum yield (QY), and an emission wavelength tunability. However, CdSe is environmentally restricted and has little future in industry. Group III-V semiconductors are attractive as they are less toxic than the II-VI analogues and show comparable luminescence properties with II-VI semiconductors. Among III-V semiconductors, InP has attracted much interest as a direct gap material with a band gap of 1.27 eV, which is suitable for getting visible emission in the quantum confinement regime. Chemical synthesis of In(Zn)P/ZnS core/shell semiconducting nanocrystals or quantum dots (QDs) are well known. In this presentation we report the synthesis of In(Zn)P/ZnS core/shell type NCs in various emission range in combination with various techniques to increase their quantum yield. Also we performed to increase PL efficiency by modifying shell thickness. |
