| 학회 |
한국고분자학회 |
| 학술대회 |
2013년 가을 (10/11 ~ 10/12, 창원컨벤션센터) |
| 권호 |
38권 2호 |
| 발표분야 |
분자전자 부문위원회 |
| 제목 |
Highly luminescent In(Zn)P/ZnS core-shell and their Erbium doped quantum dots |
| 초록 |
As the current workhorse CdSe quantum dots have been well developed for display related applications. CdSe is environmentally restricted and has little future in industry. Group III-V semiconductors are attractive as they are less toxic than the II-VI analogues and show comparable luminescence properties with II-VI semiconductors. Among III-V semiconductors, InP has attracted much interest as a direct gap material with a band gap of 1.27 eV, which is suitable for getting visible emission in the quantum confinement regime. Chemical synthesis of In(Zn)P/ZnS core/shell semiconducting nanocrystals or quantum dots (QDs) are well known. In this work we are describing the synthesis of In(Zn)P/ZnS core/shell type NCs in various emission range in combination with various techniques to increase their quantum yield. |
| 저자 |
전수민, 디박, 이광섭
|
| 소속 |
한남대 |
| 키워드 |
display; InP/ZnS; quantum dots; nanocrystal
|
| E-Mail |
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