| 학회 |
한국재료학회 |
| 학술대회 |
2011년 가을 (10/27 ~ 10/29, 신라대학교) |
| 권호 |
17권 2호 |
| 발표분야 |
F. Display and optic Materials and processing(디스플레이 및 광재료) |
| 제목 |
Abnormal Behavior of MOCVD Grown AlxIn1-xN Observed by Various Material Characterizations |
| 초록 |
AlInN has been studied extensively over the past few years due to its interesting material properties that are not present in other ternary nitrides. However, basic material study of AlInN has not been reported as much compared to device applications due to the difficulty in the growth. We have performed the material studies from various aspects. A secondary ion mass spectrometry (SIMS) has shown high oxygen content above 1 x 1018 cm-3 with its insensitivity to the growth conditions. While the free carrier concentration observed by the capacitance-voltage (C-V) measurements was about 3 x 1017 cm-3, the activation energy measured by temperature dependent C-V was only about 4 meV. Si doped AlInN (Si level ~ 2 x 1018 cm-3) showed almost no carrier freeze-out at carrier density of 1 x1018 cm-3. More studies were carried out with a transmission electron microscopy, time-resolved photoluminescence and other analytical techniques to understand the results from SIMS and C-V studies. In this report, we will discuss the possible correlations between the abnormal characteristics in AlInN |
| 저자 |
Roy Byung-Kyu Chung, Steven P. DenBaars, James S. Speck, Shuji Nakamura
|
| 소속 |
Univ. of California Santa Barbara |
| 키워드 |
AlInN; MOCVD; characterizations
|
| E-Mail |
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