| 학회 | 한국재료학회 |
| 학술대회 | 2010년 봄 (05/13 ~ 05/14, 삼척 팰리스 호텔) |
| 권호 | 16권 1호 |
| 발표분야 | C. Energy and the Environment(에너지 및 환경재료) |
| 제목 | Effect of different buffer layers on the properties of epitaxial Ga-doped ZnO thin films grown on Al2O3 (0001) substrates at low temperature of 250 °C |
| 초록 | Abstract Epitaxial ZnO thin film has been grown on various substrates such as MgAl2O4, CaF2, Al2O3, and etc. Al2O3 has been extensively used as a substrate for ZnO epitaxy due to its low cost and availability in large area wafer. However, Al2O3 and ZnO have the large lattice mismatch of 16.8%, which induces a high density of dislocations. It is found that surface morphology and crystalline quality of ZnO layers are improved by employing thin MgO, GaN, ZnO, and etc buffer layers. In this research work, we will prepare the epitaxial 1 wt% Ga doped ZnO (GZO) thin film on an Al2O3 substrate with different buffer layers (MgO, GaN, ZnO) at a low growth temperature of 250°C using RF magnetron sputtering system. The effect of different buffer layer on the structural, morphological, electrical, and optical properties of deposited films will be investigated by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM), hall measurement system, and UV-Vis spectrometer. Details about the relationship between the characteristics of GZO thin films and buffer layer will be discussed. |
| 저자 | Ye Bin Kwon1, Kyu Ung Sim2, Hyun-Ki Lee1, Seung Wook Shin2, Jin Hyeok Kim1 |
| 소속 | 1Department of Materials Science and Engineering, 2Chonnam National Univ. |
| 키워드 | Ga doped ZnO (GZO); Buffer layer; Epitaxial growth; RF magnetron sputtering |
