| 학회 |
한국재료학회 |
| 학술대회 |
2010년 봄 (05/13 ~ 05/14, 삼척 팰리스 호텔) |
| 권호 |
16권 1호 |
| 발표분야 |
C. Energy and the Environment(에너지 및 환경재료) |
| 제목 |
Effects of ZnO buffer layer growth temperature on the properties of epitaxial Ga doped ZnO thin films grown on Al2O3 (0001) substrates using RF magnetron sputtering method |
| 초록 |
The 4 wt% Ga-doped ZnO (GZO) thin films have been prepared on Al2O3 (0001) substrates by RF magnetron sputtering method at a low growth temperature (250 oC) with different growth temperature of ZnO buffer layer from 350 oC to 500 oC. The thickness of ZnO buffer layers was fixed around 10 nm. The effects of ZnO buffer layer growth temperature on the crystallinity, microstructure, and surface morphology of GZO thin films have been investigated by X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM), and atomic force microscopy (AFM). The optimal ZnO buffer layer growth temperature was confirmed to be 500 oC, which gives the highest crystal quality. XRD and TEM studies showed all films are phase pure and c-axis oriented. The GZO thin films grown on ZnO buffer layer grown at 450 oC to 500 oC were epitaxially grown with an orientation relationship of . However, the GZO thin films grown without ZnO buffer layer and with ZnO buffer layer grown at 350 oC to 400 oC was grown as a polycrystalline hexagonal wurtzite phase with random in-plane orientation. The highest diffraction peaks corresponding to GZO (0002) plane is observed for the GZO films on ZnO buffer layer growth temperature of 500 oC. The cross-sectional FE-SEM micrographs showed GZO thin films without and with ZnO buffer layer grown at 350 oC to 400 oC have columnar structure. However, the individual grains were not observed in GZO thin films with ZnO buffer layer grown at 450 oC to 500 oC. The surface roughness of the GZO thin films was decreased by using ZnO buffer layer grown at 350 oC. However, the surface roughness of the GZO thin films was increased with further increasing growth temperature. |
| 저자 |
Kyu Ung Sim1, Seung Wook Shin2, Jae Ho Yun3, Jong-Ha Moon1, Jin Hyeok Kim1
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| 소속 |
1Chonnam National Univ., 2KAIST, 3KIER |
| 키워드 |
Ga doped ZnO (GZO); RF magnetron sputtering; Epitaxial growth; ZnO buffer layer
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| E-Mail |
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