| 초록 |
ZnO thin films consisting of high aspect ratio nano-prisms and nano-rods were successfully grown on 100 nm thick ZnO seeded glass substrate by hydrothermal technique at 60 °C and for 6 hours in an aqueous solution containing Zn(NO3)∙6H2O, Al(NO3)3∙9H2O, Ga(NO3)3∙9H2O, In(NO3)3∙9H2O, and NH4OH. The effect of addition of Al(NO3)∙6H2O, Ga(NO3)3∙9H2O, In(NO3)3∙9H2O, and Na3-citrate, as surfactant chemicals, on the structural, morphological, electrical and optical properties of ZnO thin films were investigated. X-ray diffraction studies showed that all deposited films were grown as a polycrystalline wurtzite hexagonal phase with c-axis preferred out-of-plane orientation and without unwanted second phase. From Field emission scanning electron microscopy (FE-SEM) images, ZnO thin films deposited with only Na3-citrate was dramatic thinner than ZnO thin film deposited without surfactant ions. However, ZnO thin film deposited with mixed surfactant chemicals were grown as high aspect ratio nano-prism shape and smooth morphology. These results show that relatively thick ZnO thin films with a good surface morphology can be grown easily by the appropriate use of surface modifying chemicals, such as Na3-citrate and surfactant chemicals. ZnO thin film deposited with mixed Al(NO3)∙6H2O and Na3-citrate has the lowest electrical resistivity of 2.15 x 10-1 Ωcm and the thickness of these was thicker than ZnO thin film deposited with mixed Ga(NO3)3∙9H2O, In(NO3)3∙9H2O surfactant chemicals. |
