| 학회 | 한국재료학회 |
| 학술대회 | 2017년 봄 (05/17 ~ 05/19, 목포 현대호텔) |
| 권호 | 23권 1호 |
| 발표분야 | C. 에너지 재료 분과 |
| 제목 | Tin Monosulfide Photo-absorption Layer with An Green and Low-cost Process for Solar Cells |
| 초록 | Since the noticeable progress of SnS thin-film solar cells made by Gordon et al.[1], tin monosulfide (SnS) has attracted much interest as a p-type absorber for photovoltaic devices. Thus far, the high-performance SnS absorber films have been fabricated mostly by high-vacuum methods such as thermal evaporation, ALD, and sputtering techniques. In this study, we fabricated SnS thin films by a non-vacuum process. SnS nanocrystals (NCs) were mechanochemically synthesized from elemental precursor powders without using any organic solvents and additives. To investigate the effect of Sn to S stoichiometric ratio on the crystalline phase of SnS NCs, the [Sn]/[S] ratio was systematically controlled from 0.95 to 1.05 by adjusting the mixing ratio of elemental powders. The morphological and crystallographic properties of the synthesized SnS NCs were analyzed by X-ray diffraction (XRD), Raman spectroscopy, and transmission electron microscopy (TEM). The as-synthesized SnS NCs with a stoichiometric composition (i.e., Sn1.00S) were found to have the Sn2S3 impurity phase in a non-negligible amount. The Sn2S3 impurity phase could be eliminated from the synthesized Sn1.00S NCs by a post-heat treatment at 500 °C under a 1% H2 atmosphere. Interestingly, However, the formation of Sn2S3 during the mechanochemical synthesis was greatly alleviated by introducing Sn-excess composition (e.g., Sn1.05S). To demonstrate the SnS-based thin-film solar cells, SnS NCs inks were casted onto Mo-coated glass substrates by a doctor-blade method, and subsequently the SnS NCs layer was annealed under S-containing atmosphere. The SnS solar cells were fabricated with a configuration of Mo/SnS/CdS/ZnO/ZnO:Al/Ni/Al. The solar cell with a Sn1.05S absorber layer exhibited a power conversion efficiency of 1.7%, which is vastly superior to Sn0.95S or Sn1.00S-based devices. From this work, it is suggested that preventing the formation of unfavorable secondary phases is a major challenge to achieve the highly efficient SnS thin-film solar cells. [1] P. Sinsermsuksakul , L. Sun , S. W. Lee , H. H. Park , S. B. Kim , C. Yang and R. G. Gordon, Adv. Energy Mater., 15 (2014) 1400496. |
| 저자 | 박보인1, 장윤희2, 이도권3, 이승용4 |
| 소속 | 1Center for Materials Architecturing, 2Korea Institute of Science and Technology (KIST), 3Seoul, 4Korea |
| 키워드 | SnS; tin sulfide; thin films; solar cells; photovoltaics |
