| 학회 |
한국재료학회 |
| 학술대회 |
2019년 봄 (05/15 ~ 05/17, 평창 알펜시아 리조트) |
| 권호 |
25권 1호 |
| 발표분야 |
G. 나노/박막 재료 분과 |
| 제목 |
Observation of Resistive Switching with Vertically Aligned MoS2 |
| 초록 |
Two dimensional materials such as graphene and Transition Metal Dichalcogenides (TMD) have atomically thin structure. They can also stack and form a Van der Waals layered structure. For their atomic thickness, they have been studied a lot for the application to various electronic devices such as field effect transistors, memristors, and so on. MoS2 is one of the most popular TMD material for its stability and semiconducting electronic property. However, TMD material with Van der Waals layered structure has low conductivity between the layers. Here we demonstrate resistive switching with vertically aligned MoS2 to minimize the loss of conductivity by the formation and rupture of conduction filament with various electrodes. |
| 저자 |
Woon-Oh Choe, Ho Won Jang
|
| 소속 |
Seoul National Univ. |
| 키워드 |
Two Dimensional Material; Transition Metal Dichalcogenides(TMD); MoS2; Memristor; Resistive Switching; Conduction Filament
|
| E-Mail |
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