| 학회 |
한국고분자학회 |
| 학술대회 |
2012년 가을 (10/11 ~ 10/12, 창원컨벤션센터) |
| 권호 |
37권 2호 |
| 발표분야 |
대학원생 구두발표 |
| 제목 |
Barrier property of nanolaminate layer using Al2O3 and ZrO2 PEALD for flexible electronics application |
| 초록 |
Plasma-enhanced atomic layer deposition (PEALD) has been widely used for the fabrication of single inorganic layer with good barrier property due to the advantage of atomic-level control of film thickness and uniformity of deposition layer. In this study, nanolaminate layer consisting of alternating Al2O3 barrier-layer and ZrO2 inter-layer was fabricated on PEN substrate by low frequency PEALD process. The Al2O3 and ZrO2 layer were deposited using trimethylaluminum (TMA) and tetrakis(ethylmethylamido)zirconium (TEMAZ) as precursors, respectively. And oxygen plasma was used as reactant material. We studied on the barrier property of Al2O3/ZrO2 nanolaminate layer as a function of the number of the AZ stacks at same total thickness. As increasing the number of AZ stacks, the barrier property of Al2O3/ZrO2 nanolaminate was remarkably enhanced because the layer increases the pathway of the water and oxygen vapor through substrate. |
| 저자 |
이종걸, 김성수
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| 소속 |
경희대 |
| 키워드 |
barrier property; aluminum oxide; zirconium oxide; plastic substrate; PEALD
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| E-Mail |
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