| 학회 | 한국고분자학회 |
| 학술대회 | 2002년 가을 (10/11 ~ 10/12, 군산대학교) |
| 권호 | 27권 2호, p.215 |
| 발표분야 | 분자전자 부문위원회 |
| 제목 | Synthesis of Photoresist Containing Acetal Protected β-Keto Acid Group |
| 초록 | Photoresist compositions are used in microlithography processes for making miniaturized electronic components such as in the fabrication of computer chips and integrated circuits. There are two types of photoresist, negative-working and positive-working. Positive working photoresists were preferred over negative working photoresists as they generally exhibit superior resolution capabilities. This is often caused by the swelling of negative images during development. The present invention eliminates this swelling, as the polymer undergoes a photochemically induced elimination reaction rather than crosslinking, to change solubility. In this work, we synthesized 3-(5-norbornenyl)-3,3-(ethylenedioxy)propionic acid which contains acetal protected β-keto acid group to occur the solubility change. Exposure to radiation will cause a photoacid catalyzed deprotection of the acetal group, yielding a β-keto acid which, upon heating, will undergo decarboxylation, and result in solubility change instead of crosslinking reaction. We synthesize a new type of norbornene-maleic anhydride copolymer which has acetal protected β-keto acid group, 3-(5-norbornenyl)-3,3 -(ethylenedioxy) propionic acid. We will discuss the physical properties of polymer to be measured by TGA , DSC, FT-IR, NMR, GPC, and UV then will show resist performance. |
| 저자 | 김진백1, 김경선2 |
| 소속 | 1한국과학기술원 화학과, 2분자과학사업단(BK21) & 기능성고분자연구센터 |
| 키워드 | Photoresist; Acetal Protected β-Keto Acid; Negative photoresist |
